Optoelectronic Functionality of BiFeO ₃ –SrTiO ₃ Interface

One effective way to extend the functional degree of freedom for semiconductors is introduce structural defects (e.g., surface or interface) and chemical as they commonly exist modify properties entity. Here, optoelectronic bismuth ferrite thin films their tuning by interface between film strontium titanate substrate are reported. The that have been demonstrated, especially oxygen vacancies, paramount importance in photoelectric a film-substrate system. A detailed analysis vacancy levels supports role carrier transport. These results provide new strategy design device via usual defect doping coupling.